600+ GHz发射架型ii型GaAsSb/InP DHBT的先进工艺与建模

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-10-01 DOI:10.1109/CSICS.2014.6978537

Huiming Xu, Barry Wu, Ardy Winoto, M. Feng

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引用次数: 1

摘要

研制了一种用于掺杂梯度基型ii型GaAsSb/InP DHBT的AlInP发射极基架(EL)。AlInP发射极边缘有效地减小了发射极周边表面复合电流，从而提高了电流增益。在0.25 × 5 μm2器件上，最大电流增益β = 24, BVCEO = 6.3 V, fT/fMAX = 480/620 GHz。并比较了带和不带发射极的600+ GHz型dhbt的射频性能。

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Advanced Process and Modeling on 600+ GHz Emitter Ledge Type-II GaAsSb/InP DHBT

An AlInP emitter ledge (EL) has been developed for a Type-II GaAsSb/InP DHBT with doping-graded base. The AlInP emitter ledge has effectively reduced emitter peripheral surface recombination current, thus improving current gain. A 0.25 x 5 μm2 device has demonstrated maximum current gain β = 24, BVCEO = 6.3 V and fT/fMAX = 480/620 GHz. RF performances of 600+ GHz Type II DHBTs with and without emitter ledge have also been compared.

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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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