新兴存储器的设备感知测试:启用DPPB级别的测试程序

2020 IEEE European Test Symposium (ETS) Pub Date : 2020-05-01 DOI:10.1109/ETS48528.2020.9131559

Lizhou Wu, M. Fieback, M. Taouil, S. Hamdioui

{"title":"新兴存储器的设备感知测试:启用DPPB级别的测试程序","authors":"Lizhou Wu, M. Fieback, M. Taouil, S. Hamdioui","doi":"10.1109/ETS48528.2020.9131559","DOIUrl":null,"url":null,"abstract":"This paper introduces a new test approach: device-aware test (DAT) for emerging memory technologies such as MRAM, RRAM, and PCM. The DAT approach enables accurate models of device defects to obtain realistic fault models, which are used to develop high-quality and optimized test solutions. This is demonstrated by an application of DAT to pinhole defects in STT-MRAMs and forming defects in RRAMs.","PeriodicalId":267309,"journal":{"name":"2020 IEEE European Test Symposium (ETS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Device-Aware Test for Emerging Memories: Enabling Your Test Program for DPPB Level\",\"authors\":\"Lizhou Wu, M. Fieback, M. Taouil, S. Hamdioui\",\"doi\":\"10.1109/ETS48528.2020.9131559\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper introduces a new test approach: device-aware test (DAT) for emerging memory technologies such as MRAM, RRAM, and PCM. The DAT approach enables accurate models of device defects to obtain realistic fault models, which are used to develop high-quality and optimized test solutions. This is demonstrated by an application of DAT to pinhole defects in STT-MRAMs and forming defects in RRAMs.\",\"PeriodicalId\":267309,\"journal\":{\"name\":\"2020 IEEE European Test Symposium (ETS)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE European Test Symposium (ETS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ETS48528.2020.9131559\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE European Test Symposium (ETS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ETS48528.2020.9131559","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

针对MRAM、RRAM和PCM等新兴存储技术，提出了一种新的测试方法:设备感知测试(device-aware test, DAT)。DAT方法使器件缺陷的精确模型能够获得真实的故障模型，用于开发高质量和优化的测试解决方案。这是通过应用数据对stt - mram针孔缺陷和成形缺陷的rram证明。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Device-Aware Test for Emerging Memories: Enabling Your Test Program for DPPB Level

This paper introduces a new test approach: device-aware test (DAT) for emerging memory technologies such as MRAM, RRAM, and PCM. The DAT approach enables accurate models of device defects to obtain realistic fault models, which are used to develop high-quality and optimized test solutions. This is demonstrated by an application of DAT to pinhole defects in STT-MRAMs and forming defects in RRAMs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 IEEE European Test Symposium (ETS)

自引率

0.00%

发文量