结合ITO电极的纳米孔用于DNA在不同折叠状态下的电门控

Xin Zhu, Xiaowei Wang, Z. Cao, Zhi Ye, Chaoming Gu, Chuanghong Jin, Yang Liu
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引用次数: 1

摘要

制备了集成ITO栅电极的纳米孔器件,产生孔径G调节易位事件。当VG从−0.5V上升到0.5V时,折叠一次事件的数量相对于未折叠事件增加了~ 5.5倍,这表明电调制有效孔隙截面的能力。
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Nanopores incorporating ITO electrodes for electrical gating of DNA at different folding states
Nanopore devices integrated with ITO gate electrodes are fabricated, producing pore diameters <10nm and lengths ∼30nm. Translocation signals of λ-DNA reveal detailed signatures of various DNA folding states. The gate bias VG modulates the translocation events. As VG rises from −0.5V to 0.5V, the count of folded-once events increases by ∼5.5X relative to that of unfolded ones, indicating capability of electrically modulating the effective pore cross-section.
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