Y. Tkachenko, C. Wei, J.C.M. Hwang, T. Harris, R. Grober, D. Hwang, L. Aucoin, S. Shanfield
{"title":"伪晶高电子迁移率晶体管的热电子诱导退化","authors":"Y. Tkachenko, C. Wei, J.C.M. Hwang, T. Harris, R. Grober, D. Hwang, L. Aucoin, S. Shanfield","doi":"10.1109/MCS.1995.470978","DOIUrl":null,"url":null,"abstract":"Pseudomorphic high-electron mobility transistors have been found to undergo hot-electron-induced degradation. Due to the negative temperature dependence of hot-electron effects, it will be necessary to conduct electrical and temperature stress tests separately, in order to ascertain the reliability of these transistors under normal operating conditions.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"202 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"39","resultStr":"{\"title\":\"Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors\",\"authors\":\"Y. Tkachenko, C. Wei, J.C.M. Hwang, T. Harris, R. Grober, D. Hwang, L. Aucoin, S. Shanfield\",\"doi\":\"10.1109/MCS.1995.470978\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Pseudomorphic high-electron mobility transistors have been found to undergo hot-electron-induced degradation. Due to the negative temperature dependence of hot-electron effects, it will be necessary to conduct electrical and temperature stress tests separately, in order to ascertain the reliability of these transistors under normal operating conditions.<<ETX>>\",\"PeriodicalId\":325779,\"journal\":{\"name\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"volume\":\"202 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"39\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1995.470978\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470978","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors
Pseudomorphic high-electron mobility transistors have been found to undergo hot-electron-induced degradation. Due to the negative temperature dependence of hot-electron effects, it will be necessary to conduct electrical and temperature stress tests separately, in order to ascertain the reliability of these transistors under normal operating conditions.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
