{"title":"高速数字双极电路的低电压技术","authors":"B. Razavi, Y. Ota, R. Swartz","doi":"10.1109/VLSIC.1993.920525","DOIUrl":null,"url":null,"abstract":"This paper describes design techniques for multi-GHz digital bipolar circuits that operate with supply voltages as low as 1.5 V. Examples include a multiplexer (MUX), a latch, two exclusive OR (XOR) gates, and a buffer/level shifter, circuits that typically employ stacked differential pairs in conventional ECL and hence do not easily lend themselves to low voltage operation. When implemented in a 1.5 /spl mu/m, 12-GHz bipolar technology, these circuits exhibit a speed comparable with that of their 1.5 V CMOS counterparts designed in a 0.5 /spl mu/m process with a threshold voltage of 0.5 V. These results suggest that, although V/sub BE/ of bipolar transistors does not scale as easily as the threshold voltage of MOS devices, the large bipolar transconductance can be advantageous even in 1.5 V systems. In order to ensure reliable operation, the circuits described herein employ 400 mV single-ended swings and can also provide differential outputs.","PeriodicalId":127467,"journal":{"name":"Symposium 1993 on VLSI Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Low voltage techniques for high speed digital bipolar circuits\",\"authors\":\"B. Razavi, Y. Ota, R. Swartz\",\"doi\":\"10.1109/VLSIC.1993.920525\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes design techniques for multi-GHz digital bipolar circuits that operate with supply voltages as low as 1.5 V. Examples include a multiplexer (MUX), a latch, two exclusive OR (XOR) gates, and a buffer/level shifter, circuits that typically employ stacked differential pairs in conventional ECL and hence do not easily lend themselves to low voltage operation. When implemented in a 1.5 /spl mu/m, 12-GHz bipolar technology, these circuits exhibit a speed comparable with that of their 1.5 V CMOS counterparts designed in a 0.5 /spl mu/m process with a threshold voltage of 0.5 V. These results suggest that, although V/sub BE/ of bipolar transistors does not scale as easily as the threshold voltage of MOS devices, the large bipolar transconductance can be advantageous even in 1.5 V systems. In order to ensure reliable operation, the circuits described herein employ 400 mV single-ended swings and can also provide differential outputs.\",\"PeriodicalId\":127467,\"journal\":{\"name\":\"Symposium 1993 on VLSI Circuits\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Symposium 1993 on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1993.920525\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1993 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1993.920525","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low voltage techniques for high speed digital bipolar circuits
This paper describes design techniques for multi-GHz digital bipolar circuits that operate with supply voltages as low as 1.5 V. Examples include a multiplexer (MUX), a latch, two exclusive OR (XOR) gates, and a buffer/level shifter, circuits that typically employ stacked differential pairs in conventional ECL and hence do not easily lend themselves to low voltage operation. When implemented in a 1.5 /spl mu/m, 12-GHz bipolar technology, these circuits exhibit a speed comparable with that of their 1.5 V CMOS counterparts designed in a 0.5 /spl mu/m process with a threshold voltage of 0.5 V. These results suggest that, although V/sub BE/ of bipolar transistors does not scale as easily as the threshold voltage of MOS devices, the large bipolar transconductance can be advantageous even in 1.5 V systems. In order to ensure reliable operation, the circuits described herein employ 400 mV single-ended swings and can also provide differential outputs.