{"title":"一种新型全cmos低功耗电压基准电路的设计","authors":"Yusen Xu, Wei Hu, F. Huang, Jiwei Huang","doi":"10.1109/ASICON.2013.6812028","DOIUrl":null,"url":null,"abstract":"A new low-power voltage reference circuit was proposed using the SMIC 0.18um standard CMOS process technology. The resulting voltage is equal to the extrapolated threshold voltage of a MOSFET at 0K, which was about 620mV for this process. Cadence Spectre simulation results show that the temperature coefficient of the output voltage was 12.9ppm/° in a range from -20 to 80°. The line sensitivity was 328ppm/V in a supply voltage range of 1.2-3V. Meanwhile - 68 dB @ 100Hz of the power supply rejection ratio (PSRR) is reached and it merely consumes 0.21 μ W of power. The proposed circuit is full composed of CMOS devices without any use of resistors, which enjoys the merits of low power consumption and small chip area.","PeriodicalId":150654,"journal":{"name":"2013 IEEE 10th International Conference on ASIC","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Design of a novel all-CMOS low power voltage reference circuit\",\"authors\":\"Yusen Xu, Wei Hu, F. Huang, Jiwei Huang\",\"doi\":\"10.1109/ASICON.2013.6812028\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new low-power voltage reference circuit was proposed using the SMIC 0.18um standard CMOS process technology. The resulting voltage is equal to the extrapolated threshold voltage of a MOSFET at 0K, which was about 620mV for this process. Cadence Spectre simulation results show that the temperature coefficient of the output voltage was 12.9ppm/° in a range from -20 to 80°. The line sensitivity was 328ppm/V in a supply voltage range of 1.2-3V. Meanwhile - 68 dB @ 100Hz of the power supply rejection ratio (PSRR) is reached and it merely consumes 0.21 μ W of power. The proposed circuit is full composed of CMOS devices without any use of resistors, which enjoys the merits of low power consumption and small chip area.\",\"PeriodicalId\":150654,\"journal\":{\"name\":\"2013 IEEE 10th International Conference on ASIC\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 10th International Conference on ASIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON.2013.6812028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 10th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON.2013.6812028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
采用中芯国际0.18um标准CMOS工艺技术,提出了一种新的低功耗电压基准电路。所得电压等于在0K时MOSFET的外推阈值电压,该过程约为620mV。Cadence Spectre仿真结果表明,在-20 ~ 80°范围内,输出电压的温度系数为12.9ppm/°。在电源电压1.2-3V范围内,线路灵敏度为328ppm/V。同时,电源抑制比(PSRR)达到- 68 dB @ 100Hz,功耗仅为0.21 μ W。该电路完全由CMOS器件组成,不使用任何电阻,具有功耗低、芯片面积小的优点。
Design of a novel all-CMOS low power voltage reference circuit
A new low-power voltage reference circuit was proposed using the SMIC 0.18um standard CMOS process technology. The resulting voltage is equal to the extrapolated threshold voltage of a MOSFET at 0K, which was about 620mV for this process. Cadence Spectre simulation results show that the temperature coefficient of the output voltage was 12.9ppm/° in a range from -20 to 80°. The line sensitivity was 328ppm/V in a supply voltage range of 1.2-3V. Meanwhile - 68 dB @ 100Hz of the power supply rejection ratio (PSRR) is reached and it merely consumes 0.21 μ W of power. The proposed circuit is full composed of CMOS devices without any use of resistors, which enjoys the merits of low power consumption and small chip area.