一种新型全cmos低功耗电压基准电路的设计

Yusen Xu, Wei Hu, F. Huang, Jiwei Huang
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引用次数: 3

摘要

采用中芯国际0.18um标准CMOS工艺技术,提出了一种新的低功耗电压基准电路。所得电压等于在0K时MOSFET的外推阈值电压,该过程约为620mV。Cadence Spectre仿真结果表明,在-20 ~ 80°范围内,输出电压的温度系数为12.9ppm/°。在电源电压1.2-3V范围内,线路灵敏度为328ppm/V。同时,电源抑制比(PSRR)达到- 68 dB @ 100Hz,功耗仅为0.21 μ W。该电路完全由CMOS器件组成,不使用任何电阻,具有功耗低、芯片面积小的优点。
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Design of a novel all-CMOS low power voltage reference circuit
A new low-power voltage reference circuit was proposed using the SMIC 0.18um standard CMOS process technology. The resulting voltage is equal to the extrapolated threshold voltage of a MOSFET at 0K, which was about 620mV for this process. Cadence Spectre simulation results show that the temperature coefficient of the output voltage was 12.9ppm/° in a range from -20 to 80°. The line sensitivity was 328ppm/V in a supply voltage range of 1.2-3V. Meanwhile - 68 dB @ 100Hz of the power supply rejection ratio (PSRR) is reached and it merely consumes 0.21 μ W of power. The proposed circuit is full composed of CMOS devices without any use of resistors, which enjoys the merits of low power consumption and small chip area.
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