有源温度补偿复合自由-自由光束MEMS谐振器的标准工艺设计

G. Xereas, V. Chodavarapu
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摘要

频率参考几乎用于所有现代电子设备,包括移动电话、个人电脑以及科学和医疗仪器。随着现代消费移动设备对低成本、低复杂性、紧凑系统集成和低功耗的严格要求,开发批量制造的MEMS谐振器已经引起了人们的极大兴趣。MEMS谐振器的一个重要挑战是匹配石英谐振器的频率和温度稳定性。我们介绍了使用PolyMUMPS开发的1MHz和20MHz温度补偿Free-Free光束MEMS谐振器,PolyMUMPS是MEMSCAP提供的商业多用户工艺。我们介绍了一种新的温度补偿技术,可以在宽温度范围内实现高频稳定性。我们采用了三种策略:通过在谐振器上使用结构金(Au)层进行无源补偿,通过使用加热器元件进行有源补偿,以及使用Free-Free光束设计来最大限度地减少振动结构与衬底之间的热不匹配的影响。进行了详细的机电仿真以评估频率响应和质量因子(Q)。具体而言,对于20MHz器件,无源补偿设计的Q为10,000。使用有限元建模(FEM)仿真来评估谐振器在-50°C至125°C之间的频率温度系数(TCf),其中主动补偿谐振器的频率温度系数为+0.638 ppm/°C,而被动补偿谐振器的频率温度系数为-1.66 ppm/°C,无补偿谐振器的频率温度系数为-8.48 ppm/°C。电-热-机械模拟表明,在施加电压为10V和功耗为8.42 mW的情况下,加热元件能够使谐振器的温度提高约53°C。
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Design of active temperature compensated composite free-free beam MEMS resonators in a standard process
Frequency references are used in almost every modern electronic device including mobile phones, personal computers, and scientific and medical instrumentation. With modern consumer mobile devices imposing stringent requirements of low cost, low complexity, compact system integration and low power consumption, there has been significant interest to develop batch-manufactured MEMS resonators. An important challenge for MEMS resonators is to match the frequency and temperature stability of quartz resonators. We present 1MHz and 20MHz temperature compensated Free-Free beam MEMS resonators developed using PolyMUMPS, which is a commercial multi-user process available from MEMSCAP. We introduce a novel temperature compensation technique that enables high frequency stability over a wide temperature range. We used three strategies: passive compensation by using a structural gold (Au) layer on the resonator, active compensation through using a heater element, and a Free-Free beam design that minimizes the effects of thermal mismatch between the vibrating structure and the substrate. Detailed electro-mechanical simulations were performed to evaluate the frequency response and Quality Factor (Q). Specifically, for the 20MHz device, a Q of 10,000 was obtained for the passive compensated design. Finite Element Modeling (FEM) simulations were used to evaluate the Temperature Coefficient of frequency (TCf) of the resonators between -50°C and 125°C which yielded +0.638 ppm/°C for the active compensated, compared to -1.66 ppm/°C for the passively compensated design and -8.48 ppm/°C for uncompensated design for the 20MHz device. Electro-thermo-mechanical simulations showed that the heater element was capable of increasing the temperature of the resonators by approximately 53°C with an applied voltage of 10V and power consumption of 8.42 mW.
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