{"title":"细线NMOS跨阻放大器","authors":"A. Abidi, B. Kasper, R. Kushner","doi":"10.1109/ISSCC.1984.1156584","DOIUrl":null,"url":null,"abstract":"Two broadband transresistance amplifiers with bandwidths of about 700MHz, using one micron channel length NMOS devices, and incorporating a voltage controllable gain stage and a temperature tracking circuit, will be reported. One amplifier has been used as a front end for a fiber optics system operating at 800Mb/s.","PeriodicalId":260117,"journal":{"name":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Fine line NMOS transresistance amplifiers\",\"authors\":\"A. Abidi, B. Kasper, R. Kushner\",\"doi\":\"10.1109/ISSCC.1984.1156584\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two broadband transresistance amplifiers with bandwidths of about 700MHz, using one micron channel length NMOS devices, and incorporating a voltage controllable gain stage and a temperature tracking circuit, will be reported. One amplifier has been used as a front end for a fiber optics system operating at 800Mb/s.\",\"PeriodicalId\":260117,\"journal\":{\"name\":\"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1984.1156584\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1984.1156584","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two broadband transresistance amplifiers with bandwidths of about 700MHz, using one micron channel length NMOS devices, and incorporating a voltage controllable gain stage and a temperature tracking circuit, will be reported. One amplifier has been used as a front end for a fiber optics system operating at 800Mb/s.