用封装键合线电感补偿大于Gbps差分SerDes器件的ESD和输入电容效应

Seungyoung Ahn, Jongbae Park, Daehyun Chung, Joungho Kim
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引用次数: 3

摘要

本文首先介绍了利用封装键合线电感补偿集成电路输入电容效应的方法。通过对这种效应的分析,我们提出了寻找最佳电感的方法,并通过仿真和测量证明了该方法对时域性能的改善。
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Compensation of ESD and input capacitance effect by using package bondwire inductance for over Gbps differential SerDes devices
We firstly introduce the compensation of ICs input capacitance effect by using the package bondwire inductance. With the analysis of this effect, we suggested the methodology of finding optimized inductance and demonstrated the improvement in time-domain performance by simulation and measurement.
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