超导器件三维互连中Nb与Si中间层直接键合的键合界面特性

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598360

Yuta Takahashi, M. Fujino, H. Nakagawa, K. Kikuchi, T. Taino

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引用次数: 0

摘要

在本研究中，沉积的Nb和Si/Nb样品在室温下采用表面活化键合法直接键合。对Nb/Nb界面的透射电镜观察证实存在约3 nm的中间层。在0.3 K的温度下，在Nb薄膜上沉积的Si (5 nm)样品可获得4 ~ 6 mA的超导电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Bonded interface properties of Nb direct bonding with Si intermediate layer for 3D interconnection of superconducting devices

In this study, Deposited Nb and Si/Nb samples were bonded directly by surface activated bonding method at room temperature. TEM observation of the Nb/Nb interface confirmed an intermediate layer of about 3 nm. A superconducting current of 4–6 mA was observed at 0.3 K in a Si (5 nm) sample deposited on Nb thin film.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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