宽隔离波导-微带同相功率分配器的新设计方法

Zhang Dang, Hai-Fan Zhu, Jian Huang, Huali Zhu, Yong Zhang
{"title":"宽隔离波导-微带同相功率分配器的新设计方法","authors":"Zhang Dang, Hai-Fan Zhu, Jian Huang, Huali Zhu, Yong Zhang","doi":"10.1109/IWS55252.2022.9977611","DOIUrl":null,"url":null,"abstract":"A design method of the 3-dB waveguide-to-microstrip power dividers with wide isolated frequency band has been presented in this study. A new TaN film resistor on AIN ceramic substrate, which is not in contact with the microstrip probes, is designed in the waveguide to improve the isolation of the divider. The measured results show above 10 dB minimum isolation in the range of 28–37 GHz. In addition, the return loss is better than 15 dB at all ports, with an average loss of 0.57 dB. The isolation design for the divider proposed in this study can achieve a wide bandwidth without increasing loss.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A New Design Methodology for the Wide Isolated Waveguide-to-Microstrip In-phase Power Divider\",\"authors\":\"Zhang Dang, Hai-Fan Zhu, Jian Huang, Huali Zhu, Yong Zhang\",\"doi\":\"10.1109/IWS55252.2022.9977611\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A design method of the 3-dB waveguide-to-microstrip power dividers with wide isolated frequency band has been presented in this study. A new TaN film resistor on AIN ceramic substrate, which is not in contact with the microstrip probes, is designed in the waveguide to improve the isolation of the divider. The measured results show above 10 dB minimum isolation in the range of 28–37 GHz. In addition, the return loss is better than 15 dB at all ports, with an average loss of 0.57 dB. The isolation design for the divider proposed in this study can achieve a wide bandwidth without increasing loss.\",\"PeriodicalId\":126964,\"journal\":{\"name\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWS55252.2022.9977611\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS55252.2022.9977611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

本文提出了一种宽隔离频带3db波导-微带功率分配器的设计方法。为了提高分频器的隔离性,在波导中设计了一种新的不与微带探头接触的AIN陶瓷基板上的TaN膜电阻。测量结果表明,在28-37 GHz范围内,最小隔离度可达10 dB以上。此外,各端口回波损耗均优于15 dB,平均损耗为0.57 dB。本研究提出的分频器隔离设计可以在不增加损耗的情况下获得较宽的带宽。
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A New Design Methodology for the Wide Isolated Waveguide-to-Microstrip In-phase Power Divider
A design method of the 3-dB waveguide-to-microstrip power dividers with wide isolated frequency band has been presented in this study. A new TaN film resistor on AIN ceramic substrate, which is not in contact with the microstrip probes, is designed in the waveguide to improve the isolation of the divider. The measured results show above 10 dB minimum isolation in the range of 28–37 GHz. In addition, the return loss is better than 15 dB at all ports, with an average loss of 0.57 dB. The isolation design for the divider proposed in this study can achieve a wide bandwidth without increasing loss.
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