T. Maeda, K. Numata, M. Tokushima, M. Ishikawa, M. Fukaishi, H. Hida, Y. Ohno
{"title":"一种用于超低电源电压GaAs异质结场效应晶体管的新型高速低功耗三态驱动触发器(TD-FF)","authors":"T. Maeda, K. Numata, M. Tokushima, M. Ishikawa, M. Fukaishi, H. Hida, Y. Ohno","doi":"10.1109/GAAS.1993.394496","DOIUrl":null,"url":null,"abstract":"The authors describe a new GaAs static flip flop, called TD-FF (tri-state driver flip flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. The authors also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs\",\"authors\":\"T. Maeda, K. Numata, M. Tokushima, M. Ishikawa, M. Fukaishi, H. Hida, Y. Ohno\",\"doi\":\"10.1109/GAAS.1993.394496\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors describe a new GaAs static flip flop, called TD-FF (tri-state driver flip flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. The authors also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.<<ETX>>\",\"PeriodicalId\":347339,\"journal\":{\"name\":\"15th Annual GaAs IC Symposium\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"15th Annual GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1993.394496\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394496","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs
The authors describe a new GaAs static flip flop, called TD-FF (tri-state driver flip flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. The authors also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.<>
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