{"title":"门控硅器件中同步自旋和电荷输运","authors":"Jing Li, I. Appelbaum","doi":"10.1109/DRC.2011.5994469","DOIUrl":null,"url":null,"abstract":"Recent advances in the development of techniques for electrical injection and detection of spin-polarized electrons in silicon have aroused intensive research on exploiting devices and circuits that utilize the spin degree of freedom [1–3] as well as electron charge in this dominant material of the semiconductor integrated circuits industry.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simultaneous spin and charge transport in gated Si devices\",\"authors\":\"Jing Li, I. Appelbaum\",\"doi\":\"10.1109/DRC.2011.5994469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent advances in the development of techniques for electrical injection and detection of spin-polarized electrons in silicon have aroused intensive research on exploiting devices and circuits that utilize the spin degree of freedom [1–3] as well as electron charge in this dominant material of the semiconductor integrated circuits industry.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simultaneous spin and charge transport in gated Si devices
Recent advances in the development of techniques for electrical injection and detection of spin-polarized electrons in silicon have aroused intensive research on exploiting devices and circuits that utilize the spin degree of freedom [1–3] as well as electron charge in this dominant material of the semiconductor integrated circuits industry.
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