G. Dallmann, T. Feudel, H. Syhre, H. Lendenmann, Wolfgang Fichtner
{"title":"MCT和IGBT结构的二维掺杂谱表征","authors":"G. Dallmann, T. Feudel, H. Syhre, H. Lendenmann, Wolfgang Fichtner","doi":"10.1109/ISPSD.1994.583749","DOIUrl":null,"url":null,"abstract":"Different measurement and imaging techniques (SIMS, spreading resistance, electron beam induced current, dopant etching and SEM inspection) have been used together with 2D process simulation to acquire complete information about vertical and lateral dopant distribution in MCT and IGBT structures. We utilized impurity depth profiles to verify the simulation tools. The information of the process simulation than was very helpful to interpret the results of the 2D imaging techniques.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Two-dimensional dopant profile characterization for MCT and IGBT structures\",\"authors\":\"G. Dallmann, T. Feudel, H. Syhre, H. Lendenmann, Wolfgang Fichtner\",\"doi\":\"10.1109/ISPSD.1994.583749\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Different measurement and imaging techniques (SIMS, spreading resistance, electron beam induced current, dopant etching and SEM inspection) have been used together with 2D process simulation to acquire complete information about vertical and lateral dopant distribution in MCT and IGBT structures. We utilized impurity depth profiles to verify the simulation tools. The information of the process simulation than was very helpful to interpret the results of the 2D imaging techniques.\",\"PeriodicalId\":405897,\"journal\":{\"name\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1994.583749\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583749","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-dimensional dopant profile characterization for MCT and IGBT structures
Different measurement and imaging techniques (SIMS, spreading resistance, electron beam induced current, dopant etching and SEM inspection) have been used together with 2D process simulation to acquire complete information about vertical and lateral dopant distribution in MCT and IGBT structures. We utilized impurity depth profiles to verify the simulation tools. The information of the process simulation than was very helpful to interpret the results of the 2D imaging techniques.
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