{"title":"重力对三元合金半导体体晶生长的影响","authors":"Y. Hayakawa","doi":"10.1109/ICIPRM.2010.5515934","DOIUrl":null,"url":null,"abstract":"The paper describes microgravity experiment using Chinese recovery satellite and the in-situ measurement of composition profile in the solution by X-ray penetration method to make clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of gravity on the growth of ternary alloy semiconductor bulk crystals\",\"authors\":\"Y. Hayakawa\",\"doi\":\"10.1109/ICIPRM.2010.5515934\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper describes microgravity experiment using Chinese recovery satellite and the in-situ measurement of composition profile in the solution by X-ray penetration method to make clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5515934\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5515934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of gravity on the growth of ternary alloy semiconductor bulk crystals
The paper describes microgravity experiment using Chinese recovery satellite and the in-situ measurement of composition profile in the solution by X-ray penetration method to make clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals.
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