大功率器件用Ga2O3/Si直接键合界面的制备

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598435

Jianbo Liang, Daiki Takatsuki, Y. Shimizu, M. Higashiwaki, Y. Ohno, Y. Nagai, N. Shigekawa

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摘要

Ga2O3(010)/Si(100)和Ga2O3(001)/Si(100)界面的制备是通过Ga2O3与Si衬底的表面活化键合(SAB)实现的。用透射电子显微镜(TEM)对键合界面的结构进行了表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication of Ga2O3/Si direct bonding interface for high power device applications

The fabrication of Ga2O3(010)/Si(100) and Ga2O3(001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga2O3 and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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