Performance Analysis of Schottky Barrier Height Modulation in Strained (10, 0) MoS2 Armchair Nano Ribbon-Metal Junction

In this work by means of ab-initio calculations and Non equilibrium Green's function (NEGF) simulation we look to investigate the effect of strain in MoS2 armchair nanoribbon (ANR)-metal junctions. We consider a (10, 0) MoS2 ANR and various metals as Ti, Cr, Al and Ag for contact material. The effect of strain both in plain and out of plain direction is considered. We calculated the work function variations, band-gaps and carrier effective masses with Density Functional Theory (DFT) calculation and evaluated the Schottky barriers with the Schottky-Mott formula. The currents through these barriers were then evaluated with NEGF calculations. Our results show a wide possibility of output current enhancement with Schottky barrier height modulation with the proper choice of strain and contact material combinations.