空气稳定碳纳米管晶体管的化学掺杂

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367822

J. Chen, C. Klinke, A. Afzali, P. Avouris

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引用次数: 10

摘要

在本文中，我们首次成功地通过电荷转移证明了cnfet的空气稳定化学p掺杂;引入了V/sub /的可调性，将缩放后的CNFET从双极性转换为单极性，将I/sub - on/提高了2-3个数量级，抑制了少数载流子注入(从固有肖特基势阱CNFET引起的I/sub - off/降解的免疫)，产生了10/sup 6/的优异I/sub - on//I/sub - off/比率，并表现出优异的dibl样行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Air-stable chemical doping of carbon nanotube transistors [CNFETs]

In this paper, we have successfully demonstrated, for the first time, air-stable chemical p-doping of CNFETs via charge transfer; introduced tunability of the V/sub th/, transformed scaled CNFETs from ambipolar to unipolar, improved I/sub on/ by 2-3 orders of magnitude, suppressed minority carrier injection (immunity from drain induced I/sub off/ degradation from intrinsic Schottky barrier CNFET), yielding an excellent I/sub on//I/sub off/ ratio of 10/sup 6/, and demonstrated excellent DIBL-like behavior.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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