对精确无源器件特性的阻抗矩阵测定的考虑

M. Wojnowski, M. Engl, R. Weigel
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引用次数: 6

摘要

为了准确提取rlcg参数,需要将测量的s参数矩阵转换为z矩阵。然而,s -参数有三种不同的定义,因此s -矩阵转化为z -矩阵有三种不同的公式。在本文中,我们概述了现有的s参数定义,并检查了与s矩阵到z矩阵转换相关的不确定性。此外,我们还引入了一个误差估计器来描述执行不正确转换时的不准确性。我们比较了用硅基MCM-D技术制造的电感器的去嵌入测量结果。我们表明,使用错误的转换很容易导致错误甚至灾难性的结果。
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Considerations on impedance matrix determination for accurate passive device characterization
For accurate RLCG-parameter extraction the measured S-parameter matrix needs to be converted to the Z-matrix. However, there exist three different definitions of S-parameters and consequently three different formulas of converting S-matrix into Z-matrix. In this article, we present an overview of existing S-parameters definitions and examine the uncertainties associated with the S-matrix to Z-matrix transformations. Further, we introduce an error estimator describing the inaccuracy one makes performing the incorrect transformation. We compare de-embedded measurement results of an inductor manufactured in Si-based MCM-D technology. We show that using wrong transformation can easily lead to erroneous or even catastrophic results.
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