掺镓氧化锌薄膜作为透明导电衬底应用于染料敏化太阳能电池

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543677

Chaoyang Li, S. Hou

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引用次数: 0

摘要

制备了掺杂镓的ZnO薄膜，并对其进行了表征，以取代用于染料敏化太阳能电池的ITO衬底作为透明导电衬底。研究了厚度对掺杂镓ZnO薄膜的电学、光学和结构性能的影响。结果表明，300 nm厚的掺镓ZnO薄膜的电阻率最低为3.96×10-4 Q·cm，霍尔迁移率最高为14.12 cm2/(V·s)，在可见光范围内透光率高达85%。所述的染料敏化太阳能电池采用所获得的掺镓ZnO衬底，总转换效率为1.77%，填充系数为0.507。

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Gallium-doped zinc oxide films as transparent and conductive substrates applying in dye-sensitized solar cell

The gallium doped ZnO films were prepared and characterized to be used as transparent and conductive substrates replacing commercial ITO substrate applying for dye-sensitized solar cell. The thickness effects on electrical, optical and structural properties of gallium-doped ZnO films were investigated. It was found that the lowest resistivity of 3.96×10-4 Q·cm and the highest hall mobility of 14.12 cm2/(V·s) were obtained from 300 nm-thick gallium doped ZnO film as well as the high transmittance of 85% in the visible range. The demonstrated dye-sensitized solar cell used obtained gallium-doped ZnO substatrate showed the overall conversion efficiency of 1.77% with a fill factor of 0.507.

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2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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