S. Guagliardo, F. Wrobel, Y. Aguiar, J. Autran, P. Leroux, F. Saigné, V. Pouget, A. Touboul
{"title":"基于TCAD模拟的单事件闭锁截面计算-掺杂剖面和阳极阴极间距的影响","authors":"S. Guagliardo, F. Wrobel, Y. Aguiar, J. Autran, P. Leroux, F. Saigné, V. Pouget, A. Touboul","doi":"10.1109/radecs47380.2019.9745682","DOIUrl":null,"url":null,"abstract":"In this paper SEL cross sections were calculated from TCAD simulations varying doping profiles, anode-to-cathode spacing and substrate and well taps placement values. We found that doping profiles and substrate and well taps placement variation has a stronger impact on SEL sensitivity then variation of anode to cathode spacing.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing\",\"authors\":\"S. Guagliardo, F. Wrobel, Y. Aguiar, J. Autran, P. Leroux, F. Saigné, V. Pouget, A. Touboul\",\"doi\":\"10.1109/radecs47380.2019.9745682\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper SEL cross sections were calculated from TCAD simulations varying doping profiles, anode-to-cathode spacing and substrate and well taps placement values. We found that doping profiles and substrate and well taps placement variation has a stronger impact on SEL sensitivity then variation of anode to cathode spacing.\",\"PeriodicalId\":269018,\"journal\":{\"name\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"107 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/radecs47380.2019.9745682\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745682","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing
In this paper SEL cross sections were calculated from TCAD simulations varying doping profiles, anode-to-cathode spacing and substrate and well taps placement values. We found that doping profiles and substrate and well taps placement variation has a stronger impact on SEL sensitivity then variation of anode to cathode spacing.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
