晶圆清洗过程中机器配置对EOS损坏的影响

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2016-09-01 DOI:10.1109/EOSESD.2016.7592545

K. K. Ng, K. Yan, R. Gaertner, Stefan Seidl

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引用次数: 1

摘要

在半导体生产过程中，去离子水(DI)的充电电压被认为是造成EOS损坏的根本原因，因此对锯圆过程中去离子水(DI)的充电电压进行了调查。充电电压采用非接触式静电场计测量。结果表明，滤水器的位置对去离子水的充电电压有一定的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of machine configuration on EOS damage during wafer cleaning process

An investigation was carried out on the charging voltage of deionized (DI) water during wafer cleaning at wafer sawing process, since it was supposed to be the root cause for EOS damages during semiconductor production. The charging voltage was measured using a non-contact electrostatic field meter. It was found that the positioning of the water filter influenced the amount of charging voltage of DI water.

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2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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