基于EKV模型的模拟块从散装重定向到FD SOI的设计方法

Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Pub Date : 2006-06-22 DOI:10.1109/MIXDES.2006.1706553

M. Kayal, M. Blagojevic

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引用次数: 8

摘要

本文提出了一种基本模拟块从散装重定向到完全耗尽(FD) SOI技术的方法。设计方法通常与电路仿真所用的模型无关。然而，所提出的模型与用于FD SOI电路仿真的EKV MOS模型密切相关。使用相同的EKV参数和表达式以及gm/I设计方法来证明基本模拟电路只是简单地从bulk重定向到SOI

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design Methodology Based On The Analog Blocks Retargeting From Bulk To FD SOI Using EKV Model

This paper presents a methodology of a basic analog blocks retargeting from bulk to fully depleted (FD) SOI technology. The design methodology is generally not related to the model used for the circuit simulations. However, the proposed one is closely linked to the EKV MOS model that has been chosen for the FD SOI circuit simulations. Same of EKV parameters are used and expressions along with the gm/I Ddesign approach to demonstrate that the basic analog circuits are simply retargeted from bulk to SOI

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Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.

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