A. Zomorrodian, N. Wu, S. Wilczak, C. Colbert, A. Ignatiev, C. Garcia
{"title":"用于视网膜植入的la掺杂PbZrTiO/sub 3/(PLZT)薄膜光学探测器(TOD) -仿生眼","authors":"A. Zomorrodian, N. Wu, S. Wilczak, C. Colbert, A. Ignatiev, C. Garcia","doi":"10.1109/ISAF.2002.1195887","DOIUrl":null,"url":null,"abstract":"A new ceramic optical microdetector has been developed for retinal implant as a direct replacement for damaged retinal photo-detectors in patients with dystrophies such as Retinitis Pigmentosa (RP) and Age-related Macular degeneration (AMD). The thin film optical detector (TOD) is a heterostructure device composed of an atomically ordered La-doped PbZrTiO/sub 3/(PLZT) layer epitaxially grown on an atomically ordered Pt thin film layer. The TOD has an optical response, which in the visible region has a peak at around 550 nm with a sensitivity that overlaps the eye response from 400 nm to 650 nm. The device responsivity in the visible range is at a value of /spl sim/ 1000 V/W. Individual detectors are fabricated by photolithography and etch processing as is common in the microelectronics industry. Detectors 40 /spl mu/m in diameter have been processed and have been integrated with a newly developed polymer carrier layer technique for ease of handling and implantation of microdetector arrays into the eye.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"133 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"La-doped PbZrTiO/sub 3/(PLZT) thin film optical detectors (TOD) for retinal implantation-a \\\"bionic\\\" eye\",\"authors\":\"A. Zomorrodian, N. Wu, S. Wilczak, C. Colbert, A. Ignatiev, C. Garcia\",\"doi\":\"10.1109/ISAF.2002.1195887\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new ceramic optical microdetector has been developed for retinal implant as a direct replacement for damaged retinal photo-detectors in patients with dystrophies such as Retinitis Pigmentosa (RP) and Age-related Macular degeneration (AMD). The thin film optical detector (TOD) is a heterostructure device composed of an atomically ordered La-doped PbZrTiO/sub 3/(PLZT) layer epitaxially grown on an atomically ordered Pt thin film layer. The TOD has an optical response, which in the visible region has a peak at around 550 nm with a sensitivity that overlaps the eye response from 400 nm to 650 nm. The device responsivity in the visible range is at a value of /spl sim/ 1000 V/W. Individual detectors are fabricated by photolithography and etch processing as is common in the microelectronics industry. Detectors 40 /spl mu/m in diameter have been processed and have been integrated with a newly developed polymer carrier layer technique for ease of handling and implantation of microdetector arrays into the eye.\",\"PeriodicalId\":415725,\"journal\":{\"name\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"volume\":\"133 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2002.1195887\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2002.1195887","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
La-doped PbZrTiO/sub 3/(PLZT) thin film optical detectors (TOD) for retinal implantation-a "bionic" eye
A new ceramic optical microdetector has been developed for retinal implant as a direct replacement for damaged retinal photo-detectors in patients with dystrophies such as Retinitis Pigmentosa (RP) and Age-related Macular degeneration (AMD). The thin film optical detector (TOD) is a heterostructure device composed of an atomically ordered La-doped PbZrTiO/sub 3/(PLZT) layer epitaxially grown on an atomically ordered Pt thin film layer. The TOD has an optical response, which in the visible region has a peak at around 550 nm with a sensitivity that overlaps the eye response from 400 nm to 650 nm. The device responsivity in the visible range is at a value of /spl sim/ 1000 V/W. Individual detectors are fabricated by photolithography and etch processing as is common in the microelectronics industry. Detectors 40 /spl mu/m in diameter have been processed and have been integrated with a newly developed polymer carrier layer technique for ease of handling and implantation of microdetector arrays into the eye.
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