D. Moran, O. Fox, H. McLelland, S. Russell, P. May
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Intrinsic DC operation and performance potential of 50nm gate length hydrogen-terminated diamond field effect transistors
The hydrogen-terminated diamond surface has demonstrated unique potential in the development of high power and high frequency field effect transistors (FETs) [1]. Further exploration into the intrinsic performance limitations and device operation as gate length is reduced however is essential in unveiling the potential of this exotic material system as a viable and competitive high power and high frequency device technology.