{"title":"摩尔分数对单量子阱InxGa1-xN/GaN蓝光发光二极管功率谱密度的影响","authors":"A. Prajapati, P. Dey, T. Das","doi":"10.1109/MICROCOM.2016.7522504","DOIUrl":null,"url":null,"abstract":"A single quantum well Light Emitting Diode (LED) is designed from two different semiconductors and the main advantages of quantum well structure are high radiative efficiency, surface recombination etc. We have designed the device in order to observe the impact of mole fraction on power spectral density at different wave length by keeping the anode voltage fixed. A nearly lattice matched AlGaN-InGaN-GaN double hetero-structure semiconductor device has been simulated to get the maximum power spectral density at a particular wave length. For the anode voltage of 5V, at a mole fraction of x= 0.24 for Indium in InxGa1-xN, it is observed that a power spectral density of 9.31 W/cm-eV is obtained at a wave length of 452 nm. Observations were made for mole fraction varying from x=0.01 to 0.30.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The effect of mole-fraction on power spectral density of single quantum well based InxGa1-xN/GaN blue light emitting diode\",\"authors\":\"A. Prajapati, P. Dey, T. Das\",\"doi\":\"10.1109/MICROCOM.2016.7522504\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A single quantum well Light Emitting Diode (LED) is designed from two different semiconductors and the main advantages of quantum well structure are high radiative efficiency, surface recombination etc. We have designed the device in order to observe the impact of mole fraction on power spectral density at different wave length by keeping the anode voltage fixed. A nearly lattice matched AlGaN-InGaN-GaN double hetero-structure semiconductor device has been simulated to get the maximum power spectral density at a particular wave length. For the anode voltage of 5V, at a mole fraction of x= 0.24 for Indium in InxGa1-xN, it is observed that a power spectral density of 9.31 W/cm-eV is obtained at a wave length of 452 nm. Observations were made for mole fraction varying from x=0.01 to 0.30.\",\"PeriodicalId\":118902,\"journal\":{\"name\":\"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)\",\"volume\":\"107 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MICROCOM.2016.7522504\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MICROCOM.2016.7522504","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The effect of mole-fraction on power spectral density of single quantum well based InxGa1-xN/GaN blue light emitting diode
A single quantum well Light Emitting Diode (LED) is designed from two different semiconductors and the main advantages of quantum well structure are high radiative efficiency, surface recombination etc. We have designed the device in order to observe the impact of mole fraction on power spectral density at different wave length by keeping the anode voltage fixed. A nearly lattice matched AlGaN-InGaN-GaN double hetero-structure semiconductor device has been simulated to get the maximum power spectral density at a particular wave length. For the anode voltage of 5V, at a mole fraction of x= 0.24 for Indium in InxGa1-xN, it is observed that a power spectral density of 9.31 W/cm-eV is obtained at a wave length of 452 nm. Observations were made for mole fraction varying from x=0.01 to 0.30.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
