Doping profile control of epitaxial-like Si emitting layer for the application of c-Si solar cells

The formation of p-n junctions is a crucial step in the fabrication of photovoltaic devices. Standard processes such as high temperature (> 800 °C) diffusion cannot provide the shallow doped layers, with abrupt interfaces. In this study, the epitaxial-like boron-doped silicon (epi-Si) thin films as emitters of c-Si solar cells with structure of ITO/epi-Si(p+)/c-Si(n) are investigated under the modulation of deposited parameters, such as gas ratio, and working pressure. Applying the epi-Si:H (p+) shallow junction with abrupt interface leads to improve the short curent density (Jsc) of the planar c-Si solar cell is higher than 36 mA/cm2, and efficiency reaches above 15%.