微机电结构的正切向冲击

A.P. Lee, A. Pisano, L. Lin
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引用次数: 11

摘要

由多晶硅(poly-Si)制成的微机电结构已经制造、分析和测试了频率高达14 kHz的重复冲击和连续46小时的持续时间,以表征正常和切向的微尺度冲击。采用法向和切向碰撞恢复系数,建立了碰撞缓冲器和目标碰撞壁的非线性动力学模型。据估计,恢复系数可以非常小(0-0.25),这表明在某些情况下,多晶硅微结构的冲击可以耗散大量的动能。建立了假设库仑摩擦和斜碰撞时无滑动的解析模型,认为滑动确实存在,需要更复杂的模型。在进行磨损测试时,设计了一种微观结构,以产生由冲击产生的大表面接触应力(约2 GPa)。经过12小时的测试,在撞击表面可以观察到一个表面缺陷
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Normal and tangential impact in micro electromechanical structures
Micro-electromechanical structures made of polycrystalline silicon (poly-Si) have been fabricated, analyzed, and tested for repetitive impact at frequencies of up to 14 kHz and for durations of 46 continuous hours in order to characterize both normal and tangential impact on the microscale. Nonlinear dynamic models of the impact bumper and target impact wall have been formulated using coefficients of restitution for both normal and tangential impact. It was estimated that the coefficient of restitution can be very small (0-0.25), which indicates that the impact of poly-Si microstructures can, under certain circumstances, dissipate substantial kinetic energy. An analytic model assuming Coulomb friction and no sliding during oblique impact has been formulated, and it is believed that slipping indeed exists, requiring a more complicated model. A wear test has been carried out with a design of a microstructure to generate large surface contact stress (approximately 2 GPa) resulting from impact. After 12 hours of testing, a surface defect in the impacting surface is observable.<>
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