(001) Si上InAs纳米线的结构特性

2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI:10.1109/ISNE.2016.7543309

Wei-Chieh Chen, Li-Hsing Chen, Yan-Ting Lin, Hao-Hsiung Lin

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引用次数: 0

摘要

III-V纳米线(NW)与(001)Si衬底集成是一个有前途的问题，因为它在未来的集成电路技术中具有发展潜力。在本研究中，我们开发了一种两步生长方法，可以有效地控制单一生长方向的NW。利用透射电镜分析研究了NW生长机理。

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Structural properties of InAs nanowires on (001) Si

III-V nanowire (NW) integrates with (001) Si substrate is a promising issue due to its potential in developing future IC technology. In this study, we develop a two-step growth method which can effectively control the NW in single growth direction. TEM analysis has been used to study the NW growth mechanism.

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2016 5th International Symposium on Next-Generation Electronics (ISNE)

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