Wei-Chieh Chen, Li-Hsing Chen, Yan-Ting Lin, Hao-Hsiung Lin
{"title":"(001) Si上InAs纳米线的结构特性","authors":"Wei-Chieh Chen, Li-Hsing Chen, Yan-Ting Lin, Hao-Hsiung Lin","doi":"10.1109/ISNE.2016.7543309","DOIUrl":null,"url":null,"abstract":"III-V nanowire (NW) integrates with (001) Si substrate is a promising issue due to its potential in developing future IC technology. In this study, we develop a two-step growth method which can effectively control the NW in single growth direction. TEM analysis has been used to study the NW growth mechanism.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural properties of InAs nanowires on (001) Si\",\"authors\":\"Wei-Chieh Chen, Li-Hsing Chen, Yan-Ting Lin, Hao-Hsiung Lin\",\"doi\":\"10.1109/ISNE.2016.7543309\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"III-V nanowire (NW) integrates with (001) Si substrate is a promising issue due to its potential in developing future IC technology. In this study, we develop a two-step growth method which can effectively control the NW in single growth direction. TEM analysis has been used to study the NW growth mechanism.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"144 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543309\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543309","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural properties of InAs nanowires on (001) Si
III-V nanowire (NW) integrates with (001) Si substrate is a promising issue due to its potential in developing future IC technology. In this study, we develop a two-step growth method which can effectively control the NW in single growth direction. TEM analysis has been used to study the NW growth mechanism.