忆阻器- mos混合电路冗余倍增器

A. A. El-Slehdar, A. Radwan
{"title":"忆阻器- mos混合电路冗余倍增器","authors":"A. A. El-Slehdar, A. Radwan","doi":"10.1109/ICM.2014.7071836","DOIUrl":null,"url":null,"abstract":"This paper introduces a step forward towards memristor-MOS hybrid circuit to achieve any combinational function. The proposed design is based on reducing the area by replacing the complete pull-down network with just one memristor and one comparator. The concept is then verified using an example of a simple function. Also, a proposed architecture for memristor based redundant multiplier circuit is introduced and verified using the SPICE simulation. Therefore, any redundant functions can be implemented using the same concept.","PeriodicalId":107354,"journal":{"name":"2014 26th International Conference on Microelectronics (ICM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Memristor-MOS hybrid circuit redundant multiplier\",\"authors\":\"A. A. El-Slehdar, A. Radwan\",\"doi\":\"10.1109/ICM.2014.7071836\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper introduces a step forward towards memristor-MOS hybrid circuit to achieve any combinational function. The proposed design is based on reducing the area by replacing the complete pull-down network with just one memristor and one comparator. The concept is then verified using an example of a simple function. Also, a proposed architecture for memristor based redundant multiplier circuit is introduced and verified using the SPICE simulation. Therefore, any redundant functions can be implemented using the same concept.\",\"PeriodicalId\":107354,\"journal\":{\"name\":\"2014 26th International Conference on Microelectronics (ICM)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 26th International Conference on Microelectronics (ICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2014.7071836\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 26th International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2014.7071836","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

本文介绍了忆阻器- mos混合电路在实现任意组合功能方面的新进展。提出的设计是基于减少面积,用一个忆阻器和一个比较器取代整个下拉网络。然后用一个简单函数的例子验证这个概念。提出了一种基于忆阻器的冗余乘法器电路结构,并通过SPICE仿真进行了验证。因此,任何冗余函数都可以使用相同的概念来实现。
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Memristor-MOS hybrid circuit redundant multiplier
This paper introduces a step forward towards memristor-MOS hybrid circuit to achieve any combinational function. The proposed design is based on reducing the area by replacing the complete pull-down network with just one memristor and one comparator. The concept is then verified using an example of a simple function. Also, a proposed architecture for memristor based redundant multiplier circuit is introduced and verified using the SPICE simulation. Therefore, any redundant functions can be implemented using the same concept.
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