{"title":"一种用于在线测试的改进CMOS BICS","authors":"Y. Maidon, Y. Deval, J. Bégueret","doi":"10.1109/OLT.2000.856620","DOIUrl":null,"url":null,"abstract":"Dedicated to a wide range of power supplies current monitoring, a new version of a CMOS built-in current sensor is proposed. It takes advantage of the classical parasitic resistor attached to an interconnection layer, as well as to a feedback circuit with high static gain capability. Analysis and simulation reveal that the transducer is accurate, linear and transparent. Process dependencies are taken into account. The sensor was designed in a 0.6 /spl mu/m technology and its simulated characteristics are reported in this paper.","PeriodicalId":334770,"journal":{"name":"Proceedings 6th IEEE International On-Line Testing Workshop (Cat. No.PR00646)","volume":"22 24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"An improved CMOS BICS for on-line testing\",\"authors\":\"Y. Maidon, Y. Deval, J. Bégueret\",\"doi\":\"10.1109/OLT.2000.856620\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dedicated to a wide range of power supplies current monitoring, a new version of a CMOS built-in current sensor is proposed. It takes advantage of the classical parasitic resistor attached to an interconnection layer, as well as to a feedback circuit with high static gain capability. Analysis and simulation reveal that the transducer is accurate, linear and transparent. Process dependencies are taken into account. The sensor was designed in a 0.6 /spl mu/m technology and its simulated characteristics are reported in this paper.\",\"PeriodicalId\":334770,\"journal\":{\"name\":\"Proceedings 6th IEEE International On-Line Testing Workshop (Cat. No.PR00646)\",\"volume\":\"22 24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 6th IEEE International On-Line Testing Workshop (Cat. No.PR00646)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OLT.2000.856620\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 6th IEEE International On-Line Testing Workshop (Cat. No.PR00646)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OLT.2000.856620","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dedicated to a wide range of power supplies current monitoring, a new version of a CMOS built-in current sensor is proposed. It takes advantage of the classical parasitic resistor attached to an interconnection layer, as well as to a feedback circuit with high static gain capability. Analysis and simulation reveal that the transducer is accurate, linear and transparent. Process dependencies are taken into account. The sensor was designed in a 0.6 /spl mu/m technology and its simulated characteristics are reported in this paper.
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