二维电子-气体-电子输运分析的通量插值连续元胞自动机方法

K. Fukuda, J. Hattori, H. Asai, J. Yaita, J. Kotani
{"title":"二维电子-气体-电子输运分析的通量插值连续元胞自动机方法","authors":"K. Fukuda, J. Hattori, H. Asai, J. Yaita, J. Kotani","doi":"10.23919/SISPAD49475.2020.9241683","DOIUrl":null,"url":null,"abstract":"Due to the innovation of microwave communication using GaN-based HEMT, further improvement of HEMT device performance is expected. Prediction of transport properties of 2D electron gas is indispensable for designing HEMT devices. Since electron energy becomes high in HEMT channel because of its high electric field, a simulation method which covers the effects of band nonparabolicity, subband, and upper valley is required. By combining the Poisson-Schrodinger solver with the continuous cellular automaton method, a new simulation method is realized which stably obtains the electron distribution function over a wide range including the high-energy tail. It is reported that selfconsistent simulation is realized for the case where electron concentration redistribution by intersubband transitions affects subband energies through the Poisson-Schrodinger method.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A continuous cellular automaton method with flux interpolation for two-dimensional electron gas electron transport analysis\",\"authors\":\"K. Fukuda, J. Hattori, H. Asai, J. Yaita, J. Kotani\",\"doi\":\"10.23919/SISPAD49475.2020.9241683\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Due to the innovation of microwave communication using GaN-based HEMT, further improvement of HEMT device performance is expected. Prediction of transport properties of 2D electron gas is indispensable for designing HEMT devices. Since electron energy becomes high in HEMT channel because of its high electric field, a simulation method which covers the effects of band nonparabolicity, subband, and upper valley is required. By combining the Poisson-Schrodinger solver with the continuous cellular automaton method, a new simulation method is realized which stably obtains the electron distribution function over a wide range including the high-energy tail. It is reported that selfconsistent simulation is realized for the case where electron concentration redistribution by intersubband transitions affects subband energies through the Poisson-Schrodinger method.\",\"PeriodicalId\":206964,\"journal\":{\"name\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SISPAD49475.2020.9241683\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

由于基于gan的HEMT在微波通信方面的创新,HEMT器件的性能有望进一步提高。二维电子气体输运性质的预测对于HEMT器件的设计是必不可少的。由于HEMT通道的高电场使电子能量变得很高,因此需要一种涵盖带非抛物性、子带和上谷效应的模拟方法。将泊松-薛定谔求解方法与连续元胞自动机方法相结合,实现了一种新的模拟方法,可以稳定地获得包括高能尾在内的大范围内的电子分布函数。用泊松-薛定谔方法对子带间跃迁引起的电子浓度重分布影响子带能量的情况进行了自洽模拟。
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A continuous cellular automaton method with flux interpolation for two-dimensional electron gas electron transport analysis
Due to the innovation of microwave communication using GaN-based HEMT, further improvement of HEMT device performance is expected. Prediction of transport properties of 2D electron gas is indispensable for designing HEMT devices. Since electron energy becomes high in HEMT channel because of its high electric field, a simulation method which covers the effects of band nonparabolicity, subband, and upper valley is required. By combining the Poisson-Schrodinger solver with the continuous cellular automaton method, a new simulation method is realized which stably obtains the electron distribution function over a wide range including the high-energy tail. It is reported that selfconsistent simulation is realized for the case where electron concentration redistribution by intersubband transitions affects subband energies through the Poisson-Schrodinger method.
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