Analysis of Different Gate Dielectric Materials in Carbon Nanotube Field Effect Transistor (CNFET) Using Optimization Technique

The main objective of this paper is to select the suitable gate dielectric material for the carbon nanotube field effect transistor (CNFET) using Technique for Order Preference by Similarity to Ideal Solution (TOPSIS). The selection of dielectric material is based on various material indices which include relative dielectric constant $(\varepsilon_{\mathrm{r}})$, conduction band offset (CBO), energy band gap $(\mathrm{E}_{\mathrm{g}})$ and coefficient of thermal expansion (CTE). Based on the analysis it was observed that $\text{La}2\mathrm{O}_{3}$ is the most suitable material followed by HfO2 and $\mathrm{ZrO}_{2}$ for gate dielectric material in CNFET.