{"title":"不同PH值的湿式蚀刻剂对反道蚀刻a-IGZO薄膜晶体管性能的影响","authors":"Chongyang Ren, Hongjuan Lu, Xiang Xiao, Wei Deng, Yuxiang Xiao, Shengdong Zhang","doi":"10.1109/AM-FPD.2016.7543644","DOIUrl":null,"url":null,"abstract":"Aqueous ammonia is used as the new additive to the H<sub>2</sub>O<sub>2</sub>-based etchant for back-channel-etch (BCE) amorphous Indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) to pattern Mo source/drain. The Mo residue after being etched by H<sub>2</sub>O<sub>2</sub>:NH<sub>3</sub>·H<sub>2</sub>O is removed completely by adjusting the PH value to above 7. The BCE a-IGZO TFTs fabricated with the new solution exhibit excellent performances with the field effect mobility of 12.26 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>, threshold voltage of 0.17 V and sub-threshold swing of 0.24 V/dec when PH value is 9.8. The threshold voltage shift of the device is less than -0.5 V under gate-bias voltage stress of ±30V for 1hour.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of wet etchant with different PH value on the performance of back-channel-etch a-IGZO thin-film-transistor\",\"authors\":\"Chongyang Ren, Hongjuan Lu, Xiang Xiao, Wei Deng, Yuxiang Xiao, Shengdong Zhang\",\"doi\":\"10.1109/AM-FPD.2016.7543644\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Aqueous ammonia is used as the new additive to the H<sub>2</sub>O<sub>2</sub>-based etchant for back-channel-etch (BCE) amorphous Indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) to pattern Mo source/drain. The Mo residue after being etched by H<sub>2</sub>O<sub>2</sub>:NH<sub>3</sub>·H<sub>2</sub>O is removed completely by adjusting the PH value to above 7. The BCE a-IGZO TFTs fabricated with the new solution exhibit excellent performances with the field effect mobility of 12.26 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>, threshold voltage of 0.17 V and sub-threshold swing of 0.24 V/dec when PH value is 9.8. The threshold voltage shift of the device is less than -0.5 V under gate-bias voltage stress of ±30V for 1hour.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543644\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543644","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of wet etchant with different PH value on the performance of back-channel-etch a-IGZO thin-film-transistor
Aqueous ammonia is used as the new additive to the H2O2-based etchant for back-channel-etch (BCE) amorphous Indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) to pattern Mo source/drain. The Mo residue after being etched by H2O2:NH3·H2O is removed completely by adjusting the PH value to above 7. The BCE a-IGZO TFTs fabricated with the new solution exhibit excellent performances with the field effect mobility of 12.26 cm2V-1s-1, threshold voltage of 0.17 V and sub-threshold swing of 0.24 V/dec when PH value is 9.8. The threshold voltage shift of the device is less than -0.5 V under gate-bias voltage stress of ±30V for 1hour.
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