M. Badila, S. Negru, F. Mitu, G. Brezeanu, G. Dilimot, I. Enache
{"title":"高频双极电路的集成技术","authors":"M. Badila, S. Negru, F. Mitu, G. Brezeanu, G. Dilimot, I. Enache","doi":"10.1109/SMICND.1996.557378","DOIUrl":null,"url":null,"abstract":"An integration technique for high frequency bipolar circuits is presented. A Gilbert cell and an amplifier with a bandwidth of 700 MHz and minimum 2 V supply voltage has been integrated. The circuits content npn transistors with 16 GHz cutoff frequency and BV/sub CBO/>15 V.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Integration techniques for high frequency bipolar circuits\",\"authors\":\"M. Badila, S. Negru, F. Mitu, G. Brezeanu, G. Dilimot, I. Enache\",\"doi\":\"10.1109/SMICND.1996.557378\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An integration technique for high frequency bipolar circuits is presented. A Gilbert cell and an amplifier with a bandwidth of 700 MHz and minimum 2 V supply voltage has been integrated. The circuits content npn transistors with 16 GHz cutoff frequency and BV/sub CBO/>15 V.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557378\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557378","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integration techniques for high frequency bipolar circuits
An integration technique for high frequency bipolar circuits is presented. A Gilbert cell and an amplifier with a bandwidth of 700 MHz and minimum 2 V supply voltage has been integrated. The circuits content npn transistors with 16 GHz cutoff frequency and BV/sub CBO/>15 V.