{"title":"用于测试低轮廓集成电路的电磁兼容性的TEM单元","authors":"A. V. Demakov, M. Komnatnov","doi":"10.1109/EDM49804.2020.9153508","DOIUrl":null,"url":null,"abstract":"The paper presents the results of development of TEM cell with a working volume of $30\\times 30\\times 5 mm^{3}$ for measuring radiated immunity and electromagnetic emissions of low-profile integrated circuits. A solid model of the TEM cell was developed based on the analysis of various designs for matching transitions using analytical estimation and electrodynamic simulation. A research prototype of the cell was built and its S-parameters measurements were performed.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"TEM cell for Testing Low-profile Integrated Circuits for EMC\",\"authors\":\"A. V. Demakov, M. Komnatnov\",\"doi\":\"10.1109/EDM49804.2020.9153508\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the results of development of TEM cell with a working volume of $30\\\\times 30\\\\times 5 mm^{3}$ for measuring radiated immunity and electromagnetic emissions of low-profile integrated circuits. A solid model of the TEM cell was developed based on the analysis of various designs for matching transitions using analytical estimation and electrodynamic simulation. A research prototype of the cell was built and its S-parameters measurements were performed.\",\"PeriodicalId\":147681,\"journal\":{\"name\":\"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM49804.2020.9153508\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM49804.2020.9153508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
TEM cell for Testing Low-profile Integrated Circuits for EMC
The paper presents the results of development of TEM cell with a working volume of $30\times 30\times 5 mm^{3}$ for measuring radiated immunity and electromagnetic emissions of low-profile integrated circuits. A solid model of the TEM cell was developed based on the analysis of various designs for matching transitions using analytical estimation and electrodynamic simulation. A research prototype of the cell was built and its S-parameters measurements were performed.