A. Guzev, A. P. Kovchavtcev, A. Tsarenko, M. Yakushev, V. Varavin, V. Vasilyev, S. Dvoretsky, D. Marin, I. Sabinina, D. Shefer, G. Sidorov, Yu. G. Sidorov
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The electrical properties of HgCdTe layers grown by MBE on Si and P + / n junction formed on its basis
We studied the electrical properties of undoped and indium-doped and arsenic-doped CdXHg1-XTe layers with x ≈ 0.3 - 0.4 grown by molecular beam epitaxy on Si (310) substrates. After the growth HgCdTe layers were annealed at mercury atmosphere. The lifetime at room temperature in the As-doped layers, do not depend on its carrier concentration. The lifetime in indium-doped layers increased after annealing at saturated mercury vapor pressure. It is explained by suppression of recombination centers density. Temperature dependence of the reverse currents of p+-n junctions fabricated in Cd0.3Hg0.7Te heterostuctures grown by MBE on Si substrates has been studied.
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