Proton Effect Test Compare to ZnO Thin-Film Transistors with Different Active Layer Structures

In this study, we investigated the electrical and physical characteristics of ZnO TFTs with different active layer structures after high dose proton irradiation. After proton irradiation, the electrical performance of both ZnO TFTs was improved with increasing native point defects. For the ZnO nanorods TFTs, an anomalous hump phenomenon has disappeared, and the performance has dramatically improved compared to the ZnO film. From the results, it can be explained that the ZnO TFTs with nanostructure morphology are more sensitive to proton irradiation compared to the ZnO film.