基于Ag/PEDOT:PSS/Ta记忆电阻器的突触学习行为

Wenqiang Luo, X. Wu, Fang-Yuan Yuan, Huaqiang Wu, L. Pan, Ning Deng
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引用次数: 1

摘要

本文制作了一种Ag/ PEDOT:PSS/ Ta结构的忆阻器,并在室温下进行了测量。随着连续负电压扫描,器件的电导不断减小。而正电压扫频时,电导值先减小后增大,这与以往报道的实验结果有很大不同。在连续电压脉冲下观察到松弛现象,可以用来实现突触学习行为。发现PEDOT:PSS层对其特殊性能至关重要。
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Synaptic learning behavior based on a Ag/PEDOT:PSS/Ta memristor
In this paper, a memristor with structure of Ag/ PEDOT:PSS/ Ta was fabricated and measured at room temperature. The conductance of the device decreased continuously as the consecutive negative voltage scanning. But for positive voltage sweeping, the conductance value reduced initially then increased, which was quite different from previous reported experimental results. The relaxation phenomenon was observed under the consecutive voltage pulses, which can be used to achieve a synaptic learning behavior. It is found that the PEDOT:PSS layer was critical for the special characteristics.
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