{"title":"通过噪声系数测试集测量hemt的噪声系数和增益与偏置条件","authors":"A. Di Paola, M. Sannino","doi":"10.1109/EDMO.1995.493703","DOIUrl":null,"url":null,"abstract":"Noise figure and gain measurements of low noise transistors vs. bias conditions have to be performed by manufacturers/users in order to suggest/select the best bias from either noise or gain viewpoint, or a good noise-gain compromise. Some HEMT have been tested at different bias conditions by using a simple noise and gain test setup described in the paper.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Noise figure and gain of HEMTs vs. bias conditions measured by noise figure test-set\",\"authors\":\"A. Di Paola, M. Sannino\",\"doi\":\"10.1109/EDMO.1995.493703\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Noise figure and gain measurements of low noise transistors vs. bias conditions have to be performed by manufacturers/users in order to suggest/select the best bias from either noise or gain viewpoint, or a good noise-gain compromise. Some HEMT have been tested at different bias conditions by using a simple noise and gain test setup described in the paper.\",\"PeriodicalId\":431745,\"journal\":{\"name\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDMO.1995.493703\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1995.493703","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Noise figure and gain of HEMTs vs. bias conditions measured by noise figure test-set
Noise figure and gain measurements of low noise transistors vs. bias conditions have to be performed by manufacturers/users in order to suggest/select the best bias from either noise or gain viewpoint, or a good noise-gain compromise. Some HEMT have been tested at different bias conditions by using a simple noise and gain test setup described in the paper.