An extensive analysis of In0.53Ga0.47As/InP surrounding gate MOSFET to enhance the electrostatic performance using $\delta$-doped technique

Surrounding gate (SG) heterostructure metal oxide semiconductor field effect transistor (HMOSFET) has been embraced for generating the future device, which could limit the working range and decrease the static standby power dissipation. This paper presents an investigation of source $\delta$ -doped In0.53Ga0.47 As /InP based SGHMOSFET to enhance the device performance. As the channel is encompassed by the all-around gate with the $\delta$ -doped region in the source end, there is a better electrostatic control around the HMOSFET, which is obvious through the smaller DIBL and SS as compared to conventional SGHMOSFET. The proposed work deals with a detailed simulation based study of the device performance parameters such as the surface potential, electric field, electron mobility, On resistance, threshold voltage and drain current. The simulated results are compared with conventional SGHMOSFET. It has been revealed that $\delta$ -doped SGHMOSFET gives a superior insusceptibility to short channel effects (SCEs) when compared with conventional SGHMOSFET.