电阻尾偏置的交叉耦合CMOS压控振荡器的振荡频率

S. Milicevic, L. MacEachern
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引用次数: 3

摘要

本文提出了一个预测交叉耦合压控振荡器(VCO)振荡频率的公式。该压控振荡器采用CMOS 0.13 mum技术实现。计算得到的运行频率与仿真结果吻合较好。VCO工作在10ghz,从IV电源消耗490 muW。在1mhz偏移时,模拟的相位噪声为-114.4 dBc/Hz,从而得到-197.6 dB的优值(FOM)。该VCO覆盖748mhz的频率范围,芯片面积为0.096 mm2。温度对工作频率和峰对幅值的模拟灵敏度分别为4.58 MHz/℃和3.6 mV/℃。工作频率和峰峰幅值对电源的灵敏度分别为1.1 GHz/V和1.82 V/V。
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Frequency of oscillation of a cross-coupled CMOS VCO with resistor tail biasing
This paper presents a formula for predicting the frequency of oscillation of a cross-coupled voltage-controlled oscillator (VCO). The VCO was implemented in a CMOS 0.13 mum technology. The calculated frequency of operation shows a close agreement with the simulated results. The VCO operates at 10 GHz and consumes 490 muW from a IV supply. The simulated phase noise at a 1 MHz offset is -114.4 dBc/Hz resulting in a figure of merit (FOM) of -197.6 dB. The VCO can cover a 748 MHz frequency range and occupies 0.096 mm2 of chip area. The simulated sensitivity of the frequency of operation and peak-to-peak amplitude due to temperature is 4.58 MHz/degC and 3.6 mV/degC, respectively. The sensitivity of the frequency of operation and peak-to-peak amplitude due to power supply is 1.1 GHz/V and 1.82 V/V, respectively.
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