{"title":"14nm射频FinFET技术中热噪声γ因子的实验提取","authors":"Xuewei Ding, G. Niu, Anni Zhang, W. Cai, K. Imura","doi":"10.1109/SiRF51851.2021.9383331","DOIUrl":null,"url":null,"abstract":"This paper experimentally extracts the extrinsic and intrinsic thermal noise γ factors in a 14-nm FinFET technology. The intrinsic γ in saturation operation is found to be close to 1 for the minimum L (16nm) transistors, which is surprisingly low compared to the long channel limit of 2/3. We attribute this low noise factor to the excellent gate control of these FinFETs that makes the transistor exhibit relatively long channel thermal noise behavior at minimum gate length.","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Experimental Extraction of Thermal Noise γ Factors in a 14-nm RF FinFET technology\",\"authors\":\"Xuewei Ding, G. Niu, Anni Zhang, W. Cai, K. Imura\",\"doi\":\"10.1109/SiRF51851.2021.9383331\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper experimentally extracts the extrinsic and intrinsic thermal noise γ factors in a 14-nm FinFET technology. The intrinsic γ in saturation operation is found to be close to 1 for the minimum L (16nm) transistors, which is surprisingly low compared to the long channel limit of 2/3. We attribute this low noise factor to the excellent gate control of these FinFETs that makes the transistor exhibit relatively long channel thermal noise behavior at minimum gate length.\",\"PeriodicalId\":166842,\"journal\":{\"name\":\"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-01-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiRF51851.2021.9383331\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF51851.2021.9383331","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experimental Extraction of Thermal Noise γ Factors in a 14-nm RF FinFET technology
This paper experimentally extracts the extrinsic and intrinsic thermal noise γ factors in a 14-nm FinFET technology. The intrinsic γ in saturation operation is found to be close to 1 for the minimum L (16nm) transistors, which is surprisingly low compared to the long channel limit of 2/3. We attribute this low noise factor to the excellent gate control of these FinFETs that makes the transistor exhibit relatively long channel thermal noise behavior at minimum gate length.
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