{"title":"6-3基于NBTI、TDDS和RTN实验的基准电荷捕获模型","authors":"S. Bhagdikar, S. Mahapatra","doi":"10.23919/SISPAD49475.2020.9241593","DOIUrl":null,"url":null,"abstract":"A systematic review and comparison of existing charge trapping models in literature is performed. A framework for simulating hole trapping/de-trapping kinetics is established to compute resultant threshold voltage degradation ($\\Delta \\mathrm{V}_{\\mathrm{HT}})$ and capture-emission time constants ($\\tau_{C}-\\tau_{E}$). The models are analyzed by using data from Negative Bias Temperature Instability (NBTI), Random Telegraph Noise (RTN) and Time Dependent Defect Spectroscopy (TDDS) experiments.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"6-3 Benchmarking Charge Trapping Models with NBTI, TDDS and RTN Experiments\",\"authors\":\"S. Bhagdikar, S. Mahapatra\",\"doi\":\"10.23919/SISPAD49475.2020.9241593\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A systematic review and comparison of existing charge trapping models in literature is performed. A framework for simulating hole trapping/de-trapping kinetics is established to compute resultant threshold voltage degradation ($\\\\Delta \\\\mathrm{V}_{\\\\mathrm{HT}})$ and capture-emission time constants ($\\\\tau_{C}-\\\\tau_{E}$). The models are analyzed by using data from Negative Bias Temperature Instability (NBTI), Random Telegraph Noise (RTN) and Time Dependent Defect Spectroscopy (TDDS) experiments.\",\"PeriodicalId\":206964,\"journal\":{\"name\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SISPAD49475.2020.9241593\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241593","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
6-3 Benchmarking Charge Trapping Models with NBTI, TDDS and RTN Experiments
A systematic review and comparison of existing charge trapping models in literature is performed. A framework for simulating hole trapping/de-trapping kinetics is established to compute resultant threshold voltage degradation ($\Delta \mathrm{V}_{\mathrm{HT}})$ and capture-emission time constants ($\tau_{C}-\tau_{E}$). The models are analyzed by using data from Negative Bias Temperature Instability (NBTI), Random Telegraph Noise (RTN) and Time Dependent Defect Spectroscopy (TDDS) experiments.
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