片上射频螺旋电感和带通滤波器采用主动磁能回收

Yi-Cheng Wu, M. F. Chang
{"title":"片上射频螺旋电感和带通滤波器采用主动磁能回收","authors":"Yi-Cheng Wu, M. F. Chang","doi":"10.1109/CICC.2002.1012812","DOIUrl":null,"url":null,"abstract":"We present designs to achieve monolithic integration of high-Q spiral inductors and bandpass filters (BPFs) in standard CMOS technology. The designed transformer-type inductor behaves like an ideal inductor due to the active magnetic feedback from the secondary coil for compensating energy loss in the primary coil. This approach is compatible with mainstream IC technologies and has potential to achieve high-Q reactance with low power, low noise and high linearity. The fabricated inductors exhibit Q/spl sim/3000 between 1.5 to 2.1 GHz. The fabricated BPF shows 3 dB bandwidth of 120 MHz at 1.75 GHz with 3.1 dB in-band gain and 30 dB out-of-band rejection below 1.2 GHZ.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"On-chip RF spiral inductors and bandpass filters using active magnetic energy recovery\",\"authors\":\"Yi-Cheng Wu, M. F. Chang\",\"doi\":\"10.1109/CICC.2002.1012812\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present designs to achieve monolithic integration of high-Q spiral inductors and bandpass filters (BPFs) in standard CMOS technology. The designed transformer-type inductor behaves like an ideal inductor due to the active magnetic feedback from the secondary coil for compensating energy loss in the primary coil. This approach is compatible with mainstream IC technologies and has potential to achieve high-Q reactance with low power, low noise and high linearity. The fabricated inductors exhibit Q/spl sim/3000 between 1.5 to 2.1 GHz. The fabricated BPF shows 3 dB bandwidth of 120 MHz at 1.75 GHz with 3.1 dB in-band gain and 30 dB out-of-band rejection below 1.2 GHZ.\",\"PeriodicalId\":209025,\"journal\":{\"name\":\"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2002.1012812\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2002.1012812","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

我们提出了在标准CMOS技术中实现高q螺旋电感器和带通滤波器(bpf)的单片集成的设计。所设计的变压器型电感由于二次线圈的有源磁反馈补偿了一次线圈的能量损失而表现为理想电感。该方法与主流IC技术兼容,具有实现低功耗、低噪声和高线性度的高q抗的潜力。制作的电感器在1.5至2.1 GHz之间显示Q/spl sim/3000。所制备的BPF在1.75 GHz时带宽为120mhz,带宽为3db,带内增益为3.1 dB,带外抑制为30db。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
On-chip RF spiral inductors and bandpass filters using active magnetic energy recovery
We present designs to achieve monolithic integration of high-Q spiral inductors and bandpass filters (BPFs) in standard CMOS technology. The designed transformer-type inductor behaves like an ideal inductor due to the active magnetic feedback from the secondary coil for compensating energy loss in the primary coil. This approach is compatible with mainstream IC technologies and has potential to achieve high-Q reactance with low power, low noise and high linearity. The fabricated inductors exhibit Q/spl sim/3000 between 1.5 to 2.1 GHz. The fabricated BPF shows 3 dB bandwidth of 120 MHz at 1.75 GHz with 3.1 dB in-band gain and 30 dB out-of-band rejection below 1.2 GHZ.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A signal integrity-driven buffer insertion technique for post-routing noise and delay optimization Modularized low temperature LNO/PZT/LNO ferroelectric capacitor-over-interconnect (COI) FeRAM for advanced SOC (ASOC) application SOI Hall effect sensor operating up to 270/spl deg/C A 402-output TFT-LCD driver IC with power-controlling function by selecting number of colors Understanding MOSFET mismatch for analog design
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1