电场对量子点中两个相互作用电子能级的影响

C. Chakraborty, P. Lai, S. Chakraborty
{"title":"电场对量子点中两个相互作用电子能级的影响","authors":"C. Chakraborty, P. Lai, S. Chakraborty","doi":"10.1109/HKEDM.2000.904224","DOIUrl":null,"url":null,"abstract":"The electric field induced shift of ground-state and higher energy levels of two interacting electrons in a GaAs quantum dot with parabolic confinement is presented. A perturbation method is used to calculate the shift in the electronic energy levels. The results indicate a negative energy level shift for ground and a few higher levels, while the shift is positive for other level. A periodicity of positive and negative energy level shifts occurs for higher energy levels. The lowering of energy levels is also found to be more pronounced for larger dots.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of electric field on the energy levels of two interacting electrons in a quantum dot\",\"authors\":\"C. Chakraborty, P. Lai, S. Chakraborty\",\"doi\":\"10.1109/HKEDM.2000.904224\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electric field induced shift of ground-state and higher energy levels of two interacting electrons in a GaAs quantum dot with parabolic confinement is presented. A perturbation method is used to calculate the shift in the electronic energy levels. The results indicate a negative energy level shift for ground and a few higher levels, while the shift is positive for other level. A periodicity of positive and negative energy level shifts occurs for higher energy levels. The lowering of energy levels is also found to be more pronounced for larger dots.\",\"PeriodicalId\":178667,\"journal\":{\"name\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2000.904224\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2000.904224","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

研究了具有抛物约束的GaAs量子点中两个相互作用电子在电场作用下的基态位移和高能级位移。用微扰法计算了电子能级的位移。结果表明,地面和较高能级为负能级偏移,其他能级为正能级偏移。在较高的能级上出现正能级和负能级的周期性移位。研究还发现,能量水平的降低在较大的点上更为明显。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Effect of electric field on the energy levels of two interacting electrons in a quantum dot
The electric field induced shift of ground-state and higher energy levels of two interacting electrons in a GaAs quantum dot with parabolic confinement is presented. A perturbation method is used to calculate the shift in the electronic energy levels. The results indicate a negative energy level shift for ground and a few higher levels, while the shift is positive for other level. A periodicity of positive and negative energy level shifts occurs for higher energy levels. The lowering of energy levels is also found to be more pronounced for larger dots.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Fabrication of amorphous carbon films by using organic hydrocarbon source Short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices Statistical analysis of quantized inversion layer in MOS devices with ultra-thin gate oxide and high substrate doping levels New characteristics of direct hole tunneling through ultrathin gate oxide (2.7 nm) in p+/pMOS and its applications Negative transconductance effect in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectric
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1