28GHz RX前端与基于次谐波的毫米波LO生成在16nm FinFET

B. Jann, Sanket Jain, A. Ravi, S. Patnaik, A. Natarajan
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引用次数: 1

摘要

集成毫米波接收机(RX)阵列的功耗是毫米波相控阵向支持数字多波束形成的全毫米波MIMO阵列发展的关键障碍。在本文中,我们提出了两个低功耗毫米波16nm FinFET RX前端,利用一种新颖的功率和面积效率高的多相LO方法来实现低功耗时钟分布。在第一种方法中,注入锁定振荡器使用多相信号为射频混频器产生所需的毫米波本振。在第二种方法中,使用一种新型的次谐波混频器,在输入毫米波频率的1/5处使用多相本相LO对毫米波信号进行下变频。两种RX实现在23-26GHz的输入带宽上实现55dB (53dB)增益,带内噪声系数为5.4dB (5dB),每个元件消耗82mW (67mW)功率。一个关键的贡献是27兆瓦(24兆瓦)的最先进的LO分配功耗,使这些方法适用于大规模相控阵。
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28GHz RX frontends with sub-harmonic-based mm-wave LO Generation in 16nm FinFET
Power consumption of integrated mm-wave receiver (RX) arrays is a critical barrier for evolution from mm-wave phased arrays to full mm-wave MIMO arrays that support digital multi beam-forming. In this paper, we propose two low-power mm-wave 16nm FinFET RX front-ends that leverage a novel power and area-efficient multi-phase LO approach to enable low-power clock distribution. In the first approach, an injection locked oscillator uses multi-phase signals to produce desired mm-wave LO for the RF mixers. In the second approach, a novel sub-harmonic mixer is used to down-convert the mm-Wave signal using a multi-phase LO at 1/5th the input mm-wave frequency. The two RX implementations achieve 55dB (53dB) gain across an input bandwidth of 23-26GHz with in-band noise figure of 5.4dB (5dB) and consuming 82mW (67mW) power per element. A key contribution is state-of-the-art power consumption in LO distribution of 27mW (24mW) making these approaches amenable to large-scale phased arrays.
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