使用nanoppierce™接触器直接连接和测试TSV和microbump设备,用于3D-IC集成

O. Yaglioglu, B. Eldridge
{"title":"使用nanoppierce™接触器直接连接和测试TSV和microbump设备,用于3D-IC集成","authors":"O. Yaglioglu, B. Eldridge","doi":"10.1109/VTS.2012.6231086","DOIUrl":null,"url":null,"abstract":"Testing of Through Silicon Via (TSV) and Micro-Bump (MB) devices by physical connection through the TSVs presents unique challenges due to the very high density of the connections, and the potential impact of contact testing on subsequent assembly steps. In addition, the very high signal counts that are the main benefit of TSV connection schemes make conventional wafer probing, particularly for memory devices which demand very high parallelism at production wafer sort, largely impractical. We present a socket solution using FormFactor Nanopierce™ contactor for direct testing of TSV's and micro-bumps arrays which enables creation of known good TSV dies for high yield stacking and known good TSV stacks for shipment to system assemblers to achieve high yield assembly. Combining this socket solution with existing full wafer contact probe solutions enables a complete TSV test flow. In addition, standard TSV interface designs and patterns can enable standard sockets. The FormFactor NanoPierce™ contactor is highly scalable and easy to fabricate at very dense pitches down to 20μm. The contactor relies on many small contact points within one contact pad and good electrical connection can be achieved at low contact forces with minimal surface damage. We present test result on both Au pads and SnAg bumps performed at 40μm × 50μm pitch array wide I/O JEDEC pattern. The resistance per contact is ~3 Ohms with 25μm overtravel, and an estimated inductance of 0.1nH per contact. Test results show no detectable damage on the contactor, and small damage on 20μm SnAg bumps.","PeriodicalId":169611,"journal":{"name":"2012 IEEE 30th VLSI Test Symposium (VTS)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":"{\"title\":\"Direct connection and testing of TSV and microbump devices using NanoPierce™ contactor for 3D-IC integration\",\"authors\":\"O. Yaglioglu, B. Eldridge\",\"doi\":\"10.1109/VTS.2012.6231086\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Testing of Through Silicon Via (TSV) and Micro-Bump (MB) devices by physical connection through the TSVs presents unique challenges due to the very high density of the connections, and the potential impact of contact testing on subsequent assembly steps. In addition, the very high signal counts that are the main benefit of TSV connection schemes make conventional wafer probing, particularly for memory devices which demand very high parallelism at production wafer sort, largely impractical. We present a socket solution using FormFactor Nanopierce™ contactor for direct testing of TSV's and micro-bumps arrays which enables creation of known good TSV dies for high yield stacking and known good TSV stacks for shipment to system assemblers to achieve high yield assembly. Combining this socket solution with existing full wafer contact probe solutions enables a complete TSV test flow. In addition, standard TSV interface designs and patterns can enable standard sockets. The FormFactor NanoPierce™ contactor is highly scalable and easy to fabricate at very dense pitches down to 20μm. The contactor relies on many small contact points within one contact pad and good electrical connection can be achieved at low contact forces with minimal surface damage. We present test result on both Au pads and SnAg bumps performed at 40μm × 50μm pitch array wide I/O JEDEC pattern. The resistance per contact is ~3 Ohms with 25μm overtravel, and an estimated inductance of 0.1nH per contact. Test results show no detectable damage on the contactor, and small damage on 20μm SnAg bumps.\",\"PeriodicalId\":169611,\"journal\":{\"name\":\"2012 IEEE 30th VLSI Test Symposium (VTS)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"31\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 30th VLSI Test Symposium (VTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTS.2012.6231086\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 30th VLSI Test Symposium (VTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2012.6231086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 31

摘要

通过TSV进行物理连接的通硅孔(TSV)和微碰撞(MB)器件的测试具有独特的挑战,因为连接的密度非常高,并且接触测试对后续组装步骤的潜在影响。此外,TSV连接方案的主要优点是非常高的信号计数,这使得传统的晶圆探测,特别是对于在生产晶圆排序时需要非常高并行性的存储设备,在很大程度上是不切实际的。我们提出了一种插座解决方案,使用FormFactor nanoppierce™接触器直接测试TSV和微凸点阵列,从而可以创建已知的优质TSV模具,用于高成品率堆叠,以及已知的优质TSV堆栈,用于运送给系统组装商,以实现高成品率组装。将此插座解决方案与现有的全晶圆接触探头解决方案相结合,可以实现完整的TSV测试流程。此外,标准TSV接口设计和模式可以启用标准套接字。FormFactor nanoppierce™接触器具有高度可扩展性,易于在低至20μm的密度下制造。接触器依赖于一个接触垫内的许多小接触点,在低接触力和最小表面损伤的情况下可以实现良好的电气连接。我们给出了在40μm × 50μm间距阵列宽I/O JEDEC模式下Au焊盘和SnAg碰撞的测试结果。每个触点的电阻为~3欧姆,超行程为25μm,每个触点的估计电感为0.1nH。测试结果表明,接触器无明显损伤,20μm的SnAg凸起损伤较小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Direct connection and testing of TSV and microbump devices using NanoPierce™ contactor for 3D-IC integration
Testing of Through Silicon Via (TSV) and Micro-Bump (MB) devices by physical connection through the TSVs presents unique challenges due to the very high density of the connections, and the potential impact of contact testing on subsequent assembly steps. In addition, the very high signal counts that are the main benefit of TSV connection schemes make conventional wafer probing, particularly for memory devices which demand very high parallelism at production wafer sort, largely impractical. We present a socket solution using FormFactor Nanopierce™ contactor for direct testing of TSV's and micro-bumps arrays which enables creation of known good TSV dies for high yield stacking and known good TSV stacks for shipment to system assemblers to achieve high yield assembly. Combining this socket solution with existing full wafer contact probe solutions enables a complete TSV test flow. In addition, standard TSV interface designs and patterns can enable standard sockets. The FormFactor NanoPierce™ contactor is highly scalable and easy to fabricate at very dense pitches down to 20μm. The contactor relies on many small contact points within one contact pad and good electrical connection can be achieved at low contact forces with minimal surface damage. We present test result on both Au pads and SnAg bumps performed at 40μm × 50μm pitch array wide I/O JEDEC pattern. The resistance per contact is ~3 Ohms with 25μm overtravel, and an estimated inductance of 0.1nH per contact. Test results show no detectable damage on the contactor, and small damage on 20μm SnAg bumps.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Derating based hardware optimizations in soft error tolerant designs Exploiting X-correlation in output compression via superset X-canceling SAT-ATPG using preferences for improved detection of complex defect mechanisms Smart selection of indirect parameters for DC-based alternate RF IC testing Write-through method for embedded memory with compression Scan-based testing
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1