{"title":"电荷对单层MoTe2半导体-金属相变的影响","authors":"Jixuan Wu, Xiaolei Ma, Jiezhi Chen, Xiangwei Jiang","doi":"10.23919/SNW.2019.8782941","DOIUrl":null,"url":null,"abstract":"To understand the charge effects on semiconductor-metal phase transition in monolayer MoTe2, the modulations of phase transition energies with electrons and holes doping are studied by using the first principle calculation. It is found that the charge will make the total energy of the distorted metal phase lower than the semiconductor phase. Also, the barrier of phase transition from the semiconductor phase to the distorted metal phase can be decreased. Our results can well explain the experimentally observed resistance switching in MoTe2 layer, indicating that the charge doping can be an effective approach to control the phase switching in MoTe2 layer.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Charge Effects on Semiconductor-Metal Phase Transition in Mono-layer MoTe2\",\"authors\":\"Jixuan Wu, Xiaolei Ma, Jiezhi Chen, Xiangwei Jiang\",\"doi\":\"10.23919/SNW.2019.8782941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To understand the charge effects on semiconductor-metal phase transition in monolayer MoTe2, the modulations of phase transition energies with electrons and holes doping are studied by using the first principle calculation. It is found that the charge will make the total energy of the distorted metal phase lower than the semiconductor phase. Also, the barrier of phase transition from the semiconductor phase to the distorted metal phase can be decreased. Our results can well explain the experimentally observed resistance switching in MoTe2 layer, indicating that the charge doping can be an effective approach to control the phase switching in MoTe2 layer.\",\"PeriodicalId\":170513,\"journal\":{\"name\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2019.8782941\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Charge Effects on Semiconductor-Metal Phase Transition in Mono-layer MoTe2
To understand the charge effects on semiconductor-metal phase transition in monolayer MoTe2, the modulations of phase transition energies with electrons and holes doping are studied by using the first principle calculation. It is found that the charge will make the total energy of the distorted metal phase lower than the semiconductor phase. Also, the barrier of phase transition from the semiconductor phase to the distorted metal phase can be decreased. Our results can well explain the experimentally observed resistance switching in MoTe2 layer, indicating that the charge doping can be an effective approach to control the phase switching in MoTe2 layer.