柔性电子器件变形诱发应力的一般方法

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551752

Heetaek Lim, S. Kong, E. Guichard, A. Hoessinger

{"title":"柔性电子器件变形诱发应力的一般方法","authors":"Heetaek Lim, S. Kong, E. Guichard, A. Hoessinger","doi":"10.1109/SISPAD.2018.8551752","DOIUrl":null,"url":null,"abstract":"We present a simulation approach that is based on non-linear finite element method. This simulation flow allows to calculate large deformation field and associated stress and strain. The obtained simulation result agrees well with analytic solution. We extend this simulation method to evaluate the impacts of the deformation induced stress on device performance as well as structural integrity.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A General Approach for Deformation Induced Stress on Flexible Electronics\",\"authors\":\"Heetaek Lim, S. Kong, E. Guichard, A. Hoessinger\",\"doi\":\"10.1109/SISPAD.2018.8551752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a simulation approach that is based on non-linear finite element method. This simulation flow allows to calculate large deformation field and associated stress and strain. The obtained simulation result agrees well with analytic solution. We extend this simulation method to evaluate the impacts of the deformation induced stress on device performance as well as structural integrity.\",\"PeriodicalId\":170070,\"journal\":{\"name\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"110 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2018.8551752\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们提出了一种基于非线性有限元法的仿真方法。这个模拟流允许计算大变形场和相关的应力和应变。仿真结果与解析解吻合较好。我们扩展了这种模拟方法来评估变形诱发应力对器件性能和结构完整性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A General Approach for Deformation Induced Stress on Flexible Electronics

We present a simulation approach that is based on non-linear finite element method. This simulation flow allows to calculate large deformation field and associated stress and strain. The obtained simulation result agrees well with analytic solution. We extend this simulation method to evaluate the impacts of the deformation induced stress on device performance as well as structural integrity.

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2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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